Monte Carlo calculation of electron drift characteristics and avalanche noise in bulk InAs
Identifieur interne : 00E567 ( Main/Repository ); précédent : 00E566; suivant : 00E568Monte Carlo calculation of electron drift characteristics and avalanche noise in bulk InAs
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Abstract
Field dependent drift velocity results are presented for electron transport in bulk indium arsenide (InAs) material based on a Monte Carlo model, which includes an analytical treatment of band-to-band impact ionization. Avalanche multiplication and related excess noise factor (F) are computed as a function of device length and applied voltage. A decrease in F with increases in device length is obtained. The results suggest an inherent utility for InAs-based single-photon avalanche detectors, particularly around the 2 μm region of interest for atmospheric remote sensing applications. © 2002 American Institute of Physics.
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Joshi</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, Virginia 23529-0246</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Virginie</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, Old Dominion University, Norfolk</wicri:cityArea></affiliation></author><author><name sortKey="Abedin, N" uniqKey="Abedin N">N. 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Singh</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Electro-Optics Branch, Aerospace Electronics Systems Division, NASA Langley Research Center, Hampton, Virginia 23681</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Virginie</region></placeName><wicri:cityArea>Electro-Optics Branch, Aerospace Electronics Systems Division, NASA Langley Research Center, Hampton</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0066372</idno><date when="2002-02-01">2002-02-01</date><idno type="stanalyst">PASCAL 02-0066372 AIP</idno><idno type="RBID">Pascal:02-0066372</idno><idno type="wicri:Area/Main/Corpus">00FE56</idno><idno type="wicri:Area/Main/Repository">00E567</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Avalanche breakdown</term><term>Computerized simulation</term><term>III-V semiconductors</term><term>Impact ionization</term><term>Indium compounds</term><term>Monte Carlo methods</term><term>Semiconductor device noise</term><term>Theoretical study</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7220H</term><term>0270U</term><term>7270</term><term>7280E</term><term>Etude théorique</term><term>Simulation ordinateur</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Claquage avalanche</term><term>Ionisation choc</term><term>Méthode Monte Carlo</term><term>Bruit dispositif semiconducteur</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Field dependent drift velocity results are presented for electron transport in bulk indium arsenide (InAs) material based on a Monte Carlo model, which includes an analytical treatment of band-to-band impact ionization. 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